- Samsung NVMe SSD powered by newly designed in-house controller
- Up to 7,450 / 6,900 MB/s sequential read/write speed
- Power efficient SSD, reliable thermal control
Specifications
General Feature
- Application Client PCs, Game Consoles
- Capacity 2,000GB (1GB=1 Billion byte by IDEMA) * Actual usable capacity may be less (due to formatting, partitioning, operating system, applications or otherwise)
- Form Factor M.2 (2280)
- Interface PCIe Gen 4.0 x4, NVMe 2.0
- Dimension (Pack: WxHxD) 80 x 22 x 2.3 mm
- Weight Max 9.0g Weight
- Storage MemorySamsung V-NAND 3-bit MLC
- Controller Samsung in-house Controller
- Cache Memory Samsung 2GB Low Power DDR4 SDRAM
Special Feature
- TRIM Support Supported
- S.M.A.R.T Support Supported
- GC (Garbage Collection) Auto Garbage Collection Algorithm
- Encryption Support AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive)
- WWN Support Not supported
- Device Sleep Mode SupportYes
Performance
- Sequential Read Up to 7,450 MB/s * Performance may vary based on system hardware & configuration
- Sequential Write Up to 6,900 MB/s * Performance may vary based on system hardware & configuration
- Random Read (4KB, QD32)Up to 1,400,000 IOPS * Performance may vary based on system hardware & configuration
- Random Write (4KB, QD32)Up to 1,550,000 IOPS * Performance may vary based on system hardware & configuration
- Random Read (4KB, QD1)Up to 22,000 IOPS * Performance may vary based on system hardware & configuration
- Random Write (4KB, QD1)Up to 80,000 IOPS * Performance may vary based on system hardware & configuration
Environment
- Average Power Consumption (system level)*Average: 5.5 W*Maximum: 8.5 W (Burst mode)* Actual power consumption may vary depending on system hardware & configuration
- Power consumption (Idle)Max. 55 mW * Actual power consumption may vary depending on system hardware & configuration
- Allowable Voltage 3.3 V ± 5 % Allowable voltage
- Reliability (MTBF) 1.5 Million Hours Reliability (MTBF)
- Operating Temperature0 – 70 ℃ Operating Temperature
- Shock1,500 G & 0.5 ms (Half sine)
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